Study the Effect of Improving the Transport Proprieties of Substrate Material in InAlAs/InGaAs/InP HEMT on Drain Current and Cut-Off Frequency of the Device
In this paper, I present the effect of improving the electronic transport properties in the substrate on the performances of the considered High Electron Mobility Transistor HEMT. The decrease of substrate structural energies leads to improving the electronic transport proprieties in the material su...
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| Format: | Article |
| Language: | English |
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Editura Universităţii din Oradea
2020-10-01
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| Series: | Journal of Electrical and Electronics Engineering |
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| Online Access: | https://electroinf.uoradea.ro/images/articles/CERCETARE/Reviste/JEEE/JEEE_V13_N2_OCT_2020/09%20paper%201603%20DERROUICHE.pdf |