The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure

The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure

This paper studied an atomic layer etching (ALE) technique with a surface treatment function for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted, and 30 s O<sub>2</sub> + 15 W BCl<sub>3</sub> was chosen as the optimal recipe. The optimal A...

Full description

Bibliographic Details
Main Authors: Fangzhou Du, Yang Jiang, Zhanxia Wu, Honghao Lu, Jiaqi He, Chuying Tang, Qiaoyu Hu, Kangyao Wen, Xinyi Tang, Haimin Hong, Hongyu Yu, Qing Wang
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Crystals
Subjects:
InAlN/GaN heterostructure
atomic layer etching
under-etching
indium clustered
surface treatment
two-dimensional electron gas density
Online Access:https://www.mdpi.com/2073-4352/12/5/722

Internet

https://www.mdpi.com/2073-4352/12/5/722

Similar Items