The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure

The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure

This paper studied an atomic layer etching (ALE) technique with a surface treatment function for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted, and 30 s O<sub>2</sub> + 15 W BCl<sub>3</sub> was chosen as the optimal recipe. The optimal A...

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Detalles Bibliográficos
Autores principales: Fangzhou Du, Yang Jiang, Zhanxia Wu, Honghao Lu, Jiaqi He, Chuying Tang, Qiaoyu Hu, Kangyao Wen, Xinyi Tang, Haimin Hong, Hongyu Yu, Qing Wang
Formato: Artículo
Lenguaje:English
Publicado: MDPI AG 2022-05-01
Colección:Crystals
Materias:
InAlN/GaN heterostructure
atomic layer etching
under-etching
indium clustered
surface treatment
two-dimensional electron gas density
Acceso en línea:https://www.mdpi.com/2073-4352/12/5/722

Internet

https://www.mdpi.com/2073-4352/12/5/722

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