A Process-Aware Analytical Gate Resistance Model for Nanosheet Field-Effect Transistors

A Process-Aware Analytical Gate Resistance Model for Nanosheet Field-Effect Transistors

In this paper, we propose a process-aware analytical gate resistance model for nanosheet field-effect transistors (NSFETs). The proposed NSFET gate resistance is modeled by applying the distributed resistance coefficient, which can be used when current flows vertically and horizontally. By predictin...

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Bibliographic Details
Main Authors: Junha Suk, Yohan Kim, Jungho Do, Garoom Kim, Woojin Rim, Sanghoon Baek, Seiseung Yoon, Soyoung Kim
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Nanosheet field-effect transistors (NSFETs)
compact model
gate resistance
Online Access:https://ieeexplore.ieee.org/document/10699326/

Internet

https://ieeexplore.ieee.org/document/10699326/

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