Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications
Difficulties in the fabrication of direct interface of ferroelectric BiFeO3 on the gate of ferroelectric field effect transistor (FeFET) is well known. This paper reports the optimization and fabrication of ferroelectric/dielectric (BiFeO3/HfO2) gate stack for the FeFET applications. RF magnetron sp...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
World Scientific Publishing
2018-10-01
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| Series: | Journal of Advanced Dielectrics |
| Subjects: | |
| Online Access: | http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18500376 |