Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications

Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications

Difficulties in the fabrication of direct interface of ferroelectric BiFeO3 on the gate of ferroelectric field effect transistor (FeFET) is well known. This paper reports the optimization and fabrication of ferroelectric/dielectric (BiFeO3/HfO2) gate stack for the FeFET applications. RF magnetron sp...

Full description

Bibliographic Details
Main Authors: Nitish Yadav, Kamal Prakash Pandey, Pramod Narayan Tripathi
Format: Article
Language:English
Published: World Scientific Publishing 2018-10-01
Series:Journal of Advanced Dielectrics
Subjects:
Endurance
ferroelectric
high-k dielectric
memory window
MFIS
Online Access:http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18500376

Similar Items

Similar Items