Tuning the Liquid–Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures

Tuning the Liquid–Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures

Controlling the morphology and composition of semiconductor nano- and micro-structures is crucial for fundamental studies and applications. Here, Si-Ge semiconductor nanostructures were fabricated using photolithographically defined micro-crucibles on Si substrates. Interestingly, the nanostructure...

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Bibliographic Details
Main Authors: Galih R. Suwito, Vladimir G. Dubrovskii, Zixiao Zhang, Weizhen Wang, Sofiane Haffouz, Dan Dalacu, Philip J. Poole, Peter Grutter, Nathaniel J. Quitoriano
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Nanomaterials
Subjects:
VLS growth
semiconductor nanostructures
Au-Si-Ge alloy
incubation time
liquid–vapour interface
Online Access:https://www.mdpi.com/2079-4991/13/5/894

Internet

https://www.mdpi.com/2079-4991/13/5/894

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