Band offsets in strained layer superlattices
Band offsets at semiconductor heterojunctions have been shown to be critically dependent on a number of factors. By applying the ab-initio pseudopotential method to the strained InGaAs/GaAs superlattice, we have been able to determine the dependence of the offsets on the strain in the system and on...
| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
Isfahan University of Technology
2004-12-01
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| Colecção: | Iranian Journal of Physics Research |
| Assuntos: | |
| Acesso em linha: | http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-268&slc_lang=en&sid=1 |