Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review

We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteristics for improvement of CMOS device electrical par...

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Bibliographic Details
Main Authors: Kazunari Kurita, Takeshi Kadono, Ryosuke Okuyama, Ayumi Onaka-Masada, Satoshi Shigematsu, Ryo Hirose, Koji Kobayashi, Akihiro Suzuki, Hidehiko Okuda, Yoshihiro Koga
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
CMOS image sensors
gettering
dark current spectroscopy
hydrocarbon molecular ion implantation
silicon wafers
white spot defect
Online Access:https://ieeexplore.ieee.org/document/9651517/

Internet

https://ieeexplore.ieee.org/document/9651517/

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