Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review
We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteristics for improvement of CMOS device electrical par...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9651517/ |
| _version_ | 1811211426739519488 |
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| author | Kazunari Kurita Takeshi Kadono Ryosuke Okuyama Ayumi Onaka-Masada Satoshi Shigematsu Ryo Hirose Koji Kobayashi Akihiro Suzuki Hidehiko Okuda Yoshihiro Koga |
| author_facet | Kazunari Kurita Takeshi Kadono Ryosuke Okuyama Ayumi Onaka-Masada Satoshi Shigematsu Ryo Hirose Koji Kobayashi Akihiro Suzuki Hidehiko Okuda Yoshihiro Koga |
| author_sort | Kazunari Kurita |
| collection | DOAJ |
| description | We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteristics for improvement of CMOS device electrical parameter such as high metallic impurity gettering, oxygen out-diffusion barrier effects from Czochralski silicon (CZ) substrate and hydrogen passivation effect for interface state defect at Si/SiO<sub>2</sub>. We demonstrate that double epitaxial growth silicon wafers have an extremely high gettering capability during CMOS device fabrication process. We also found that gettering capability strongly dependence on oxygen impurity amount in hydrocarbon molecular ion implantation projection range. We believe that this novel silicon wafer can drastically contribute to the improvement of CMOS image sensor device performance such as white spot defect and dark current. |
| first_indexed | 2024-04-12T05:12:50Z |
| format | Article |
| id | doaj.art-b1999326c971427aaf04d071dcdfa72e |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-12T05:12:50Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-b1999326c971427aaf04d071dcdfa72e2022-12-22T03:46:42ZengIEEEIEEE Journal of the Electron Devices Society2168-67342022-01-011072072710.1109/JEDS.2021.31356569651517Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A ReviewKazunari Kurita0https://orcid.org/0000-0002-1619-0078Takeshi Kadono1https://orcid.org/0000-0002-2600-6633Ryosuke Okuyama2https://orcid.org/0000-0002-0137-0914Ayumi Onaka-Masada3https://orcid.org/0000-0003-3610-6504Satoshi Shigematsu4https://orcid.org/0000-0001-6083-1664Ryo Hirose5Koji Kobayashi6Akihiro Suzuki7https://orcid.org/0000-0002-1637-0407Hidehiko Okuda8https://orcid.org/0000-0002-3155-6074Yoshihiro Koga9https://orcid.org/0000-0003-1449-7946Technology Division, SUMCO Corporation, Imari, JapanAdvanced Evaluation & Technology Section, SUMCO Corporation, Imari, JapanAdvanced Evaluation & Technology Section, SUMCO Corporation, Imari, JapanAdvanced Evaluation & Technology Section, SUMCO Corporation, Imari, JapanAdvanced Evaluation & Technology Section, SUMCO Corporation, Imari, JapanAdvanced Evaluation & Technology Section, SUMCO Corporation, Imari, JapanTechnology Division, SUMCO Corporation, Imari, JapanTechnology Division, SUMCO Corporation, Imari, JapanAdvanced Evaluation & Technology Section, SUMCO Corporation, Imari, JapanAdvanced Evaluation & Technology Section, SUMCO Corporation, Imari, JapanWe have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteristics for improvement of CMOS device electrical parameter such as high metallic impurity gettering, oxygen out-diffusion barrier effects from Czochralski silicon (CZ) substrate and hydrogen passivation effect for interface state defect at Si/SiO<sub>2</sub>. We demonstrate that double epitaxial growth silicon wafers have an extremely high gettering capability during CMOS device fabrication process. We also found that gettering capability strongly dependence on oxygen impurity amount in hydrocarbon molecular ion implantation projection range. We believe that this novel silicon wafer can drastically contribute to the improvement of CMOS image sensor device performance such as white spot defect and dark current.https://ieeexplore.ieee.org/document/9651517/CMOS image sensorsgetteringdark current spectroscopyhydrocarbon molecular ion implantationsilicon waferswhite spot defect |
| spellingShingle | Kazunari Kurita Takeshi Kadono Ryosuke Okuyama Ayumi Onaka-Masada Satoshi Shigematsu Ryo Hirose Koji Kobayashi Akihiro Suzuki Hidehiko Okuda Yoshihiro Koga Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review IEEE Journal of the Electron Devices Society CMOS image sensors gettering dark current spectroscopy hydrocarbon molecular ion implantation silicon wafers white spot defect |
| title | Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review |
| title_full | Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review |
| title_fullStr | Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review |
| title_full_unstemmed | Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review |
| title_short | Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review |
| title_sort | silicon wafer gettering design for advanced cmos image sensors using hydrocarbon molecular ion implantation a review |
| topic | CMOS image sensors gettering dark current spectroscopy hydrocarbon molecular ion implantation silicon wafers white spot defect |
| url | https://ieeexplore.ieee.org/document/9651517/ |
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