Effective Current-Driven Memory Operations for Low-Power ReRAM Applications

Effective Current-Driven Memory Operations for Low-Power ReRAM Applications

Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories (ReRAM) and enabling innovative solutions for several applications. Most work...

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Bibliographic Details
Main Authors: Albert Cirera, Blas Garrido, Antonio Rubio, Ioannis Vourkas
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Current driver
electrochemical metallization memory
knowm
memristor
resistive RAM (ReRAM)
resistive switching
Online Access:https://ieeexplore.ieee.org/document/10124933/

Internet

https://ieeexplore.ieee.org/document/10124933/

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