Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1−x O and Zn x Ga1−x O Seed Layers

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1−x O and Zn x Ga1−x O Seed Layers

Abstract ZnO nanowires (NWs) are used as building blocks for a wide range of different devices, e.g. light emitters, resonators, and sensors. Integration of the NWs into such structures requires a high level of NWs’ diameter control. Here, we present that the doping concentration of Zn x Al1−x O and...

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Bibliographic Details
Main Authors: Alexander Shkurmanov, Chris Sturm, Helena Franke, Jörg Lenzner, Marius Grundmann
Format: Article
Language:English
Published: SpringerOpen 2017-02-01
Series:Nanoscale Research Letters
Subjects:
ZnO nanowires
Ultrathin nanowires
High-pressure PLD
Online Access:http://link.springer.com/article/10.1186/s11671-017-1906-2

Internet

http://link.springer.com/article/10.1186/s11671-017-1906-2

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