Endurance of 2 Mbit Based BEOL Integrated ReRAM
In this work, we experimentally characterize the endurance of 2 Mbit resistive switching random access memories (ReRAMs) from a 16 MBit test-chip. Here, very rare failure events where the memory cells become stuck in the low-resistive state (LRS) are observed. As this failure mechanism is the limiti...
Main Authors: | , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2022-01-01
|
Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9956837/ |