Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD

Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD

The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor deposition (CVD) was evaluated at various C/Si ratios (1.0–1.2) and growth temperatures (1570–1630 °C). The microstructure and morphology of the epilayers were studied through a comparative analysis o...

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Bibliographic Details
Main Authors: Zhuorui Tang, Lin Gu, Hongping Ma, Kefeng Dai, Qian Luo, Nan Zhang, Jiyu Huang, Jiajie Fan
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Crystals
Subjects:
4H-SiC homoepitaxial layers
C/Si ratio
growth temperature
epitaxial quality
N-doping
Online Access:https://www.mdpi.com/2073-4352/13/2/193

Internet

https://www.mdpi.com/2073-4352/13/2/193

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