Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas
Low resistance n+GaN contact materials were experimentally studied for GaN HEMT applications by selective area epitaxy regrowth on a patterned SiC substrate. Epitaxy was performed by metal organic chemical vapor deposition using 100% H2 or 100% N2 as the carrier gas. Thin film characterization demon...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0082345 |