Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas
Low resistance n+GaN contact materials were experimentally studied for GaN HEMT applications by selective area epitaxy regrowth on a patterned SiC substrate. Epitaxy was performed by metal organic chemical vapor deposition using 100% H2 or 100% N2 as the carrier gas. Thin film characterization demon...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2022-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0082345 |
| _version_ | 1828230294724935680 |
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| author | Jizhong Li Paul Brabant Dan Hannan Tim Vasen Shamima Afroz Ken Nagamatsu Josei Chang Patrick Shea David Lawson Rob Howell |
| author_facet | Jizhong Li Paul Brabant Dan Hannan Tim Vasen Shamima Afroz Ken Nagamatsu Josei Chang Patrick Shea David Lawson Rob Howell |
| author_sort | Jizhong Li |
| collection | DOAJ |
| description | Low resistance n+GaN contact materials were experimentally studied for GaN HEMT applications by selective area epitaxy regrowth on a patterned SiC substrate. Epitaxy was performed by metal organic chemical vapor deposition using 100% H2 or 100% N2 as the carrier gas. Thin film characterization demonstrated that n+GaN grown in N2 carrier gas has a superior morphology with improved crystalline quality to that grown in H2 carrier gas. The results also indicated that the surface morphology of n+GaN grown in N2 carrier gas is less sensitive to mask pattern density and micro-loading effects with Si doping concentrations up to 1 × 1020/cm3. Secondary ion mass spectrometry analysis shows that C and O impurity levels in n+GaN are one order of magnitude lower with N2 carrier gas than with H2. The electrical measurement of transmission line model structures shows an n+GaN sheet resistance of 15 Ω/sq and an Ohmic metal to n+GaN contact resistance of 0.02 Ω-mm for structures grown in N2 carrier gas. These values represent 7.1× and 2.5× improvements compared to H2 carrier gas. |
| first_indexed | 2024-04-12T18:46:22Z |
| format | Article |
| id | doaj.art-b23c473475a840ed873e94980d8e4228 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T18:46:22Z |
| publishDate | 2022-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-b23c473475a840ed873e94980d8e42282022-12-22T03:20:36ZengAIP Publishing LLCAIP Advances2158-32262022-03-01123035201035201-510.1063/5.0082345Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gasJizhong Li0Paul Brabant1Dan Hannan2Tim Vasen3Shamima Afroz4Ken Nagamatsu5Josei Chang6Patrick Shea7David Lawson8Rob Howell9Advanced Technology Laboratory, Northrop Grumman Corporation, Linthicum, Maryland 21090, USAAdvanced Technology Laboratory, Northrop Grumman Corporation, Linthicum, Maryland 21090, USAAdvanced Technology Laboratory, Northrop Grumman Corporation, Linthicum, Maryland 21090, USAAdvanced Technology Laboratory, Northrop Grumman Corporation, Linthicum, Maryland 21090, USAAdvanced Technology Laboratory, Northrop Grumman Corporation, Linthicum, Maryland 21090, USAAdvanced Technology Laboratory, Northrop Grumman Corporation, Linthicum, Maryland 21090, USAAdvanced Technology Laboratory, Northrop Grumman Corporation, Linthicum, Maryland 21090, USAAdvanced Technology Laboratory, Northrop Grumman Corporation, Linthicum, Maryland 21090, USAAdvanced Technology Laboratory, Northrop Grumman Corporation, Linthicum, Maryland 21090, USAAdvanced Technology Laboratory, Northrop Grumman Corporation, Linthicum, Maryland 21090, USALow resistance n+GaN contact materials were experimentally studied for GaN HEMT applications by selective area epitaxy regrowth on a patterned SiC substrate. Epitaxy was performed by metal organic chemical vapor deposition using 100% H2 or 100% N2 as the carrier gas. Thin film characterization demonstrated that n+GaN grown in N2 carrier gas has a superior morphology with improved crystalline quality to that grown in H2 carrier gas. The results also indicated that the surface morphology of n+GaN grown in N2 carrier gas is less sensitive to mask pattern density and micro-loading effects with Si doping concentrations up to 1 × 1020/cm3. Secondary ion mass spectrometry analysis shows that C and O impurity levels in n+GaN are one order of magnitude lower with N2 carrier gas than with H2. The electrical measurement of transmission line model structures shows an n+GaN sheet resistance of 15 Ω/sq and an Ohmic metal to n+GaN contact resistance of 0.02 Ω-mm for structures grown in N2 carrier gas. These values represent 7.1× and 2.5× improvements compared to H2 carrier gas.http://dx.doi.org/10.1063/5.0082345 |
| spellingShingle | Jizhong Li Paul Brabant Dan Hannan Tim Vasen Shamima Afroz Ken Nagamatsu Josei Chang Patrick Shea David Lawson Rob Howell Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas AIP Advances |
| title | Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas |
| title_full | Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas |
| title_fullStr | Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas |
| title_full_unstemmed | Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas |
| title_short | Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas |
| title_sort | ultra low resistance n gan contacts for gan hemt applications using mocvd selective area epitaxy in n2 carrier gas |
| url | http://dx.doi.org/10.1063/5.0082345 |
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