An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior

An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior

This paper presents an efficient physics-based electro-thermal model that solves some advanced problems of modeling Silicon Carbide (SiC) power MOSFETs. It is the first electro-thermal model that simulates the temperature dependency of the first and the third quadrant characteristics, including the...

Full description

Bibliographic Details
Main Authors: Arman Ur Rashid, Md Maksudul Hossain, Yuheng Wu, Hayden Carlton, Alan Mantooth, Britt Brooks
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Silicon Carbide
Power <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc>
Body diode
Reverse recovery
Synchronous rectification
Freewheeling diode
Online Access:https://ieeexplore.ieee.org/document/9795145/

Internet

https://ieeexplore.ieee.org/document/9795145/

Similar Items