An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior
This paper presents an efficient physics-based electro-thermal model that solves some advanced problems of modeling Silicon Carbide (SiC) power MOSFETs. It is the first electro-thermal model that simulates the temperature dependency of the first and the third quadrant characteristics, including the...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Open Journal of Power Electronics |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9795145/ |
| _version_ | 1811344265192669184 |
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| author | Arman Ur Rashid Md Maksudul Hossain Yuheng Wu Hayden Carlton Alan Mantooth Britt Brooks |
| author_facet | Arman Ur Rashid Md Maksudul Hossain Yuheng Wu Hayden Carlton Alan Mantooth Britt Brooks |
| author_sort | Arman Ur Rashid |
| collection | DOAJ |
| description | This paper presents an efficient physics-based electro-thermal model that solves some advanced problems of modeling Silicon Carbide (SiC) power MOSFETs. It is the first electro-thermal model that simulates the temperature dependency of the first and the third quadrant characteristics, including the reverse recovery of the body diode accurately and efficiently. It extends from a previous work that demonstrated the isothermal physics-based model of the gate-dependent body diode. Physics-based temperature scaling of the first and third quadrant allows simulation of the self-heating effect in a wide range of temperatures (27 °C–200 °C), even for the synchronous operation. Moreover, a physics-based modeling approach is taken to include gate-voltage dependent non-linearity of the gate to source capacitance (Cgs). Also, a physic-based segmented cascaded method is taken to accurately model the Miller (Crss), and the output (Coss) capacitances at the low and very high drain to source voltage regions. Further, the temperature-dependent breakdown mechanism is included for reliable system design. Double Pulse Tests (DPTs) at various temperatures up to 200 °C validate the model's accuracy. Lastly, a synchronous buck converter test demonstrates the model's ability to predict junction temperatures, validating the model's accuracy and efficiency in a continuous operation with self-heating. |
| first_indexed | 2024-04-13T19:44:46Z |
| format | Article |
| id | doaj.art-b24aed5eca4d43d9b085aa29dc05c172 |
| institution | Directory Open Access Journal |
| issn | 2644-1314 |
| language | English |
| last_indexed | 2024-04-13T19:44:46Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of Power Electronics |
| spelling | doaj.art-b24aed5eca4d43d9b085aa29dc05c1722022-12-22T02:32:46ZengIEEEIEEE Open Journal of Power Electronics2644-13142022-01-01334836710.1109/OJPEL.2022.31822759795145An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant BehaviorArman Ur Rashid0https://orcid.org/0000-0002-6061-5934Md Maksudul Hossain1https://orcid.org/0000-0002-9166-8932Yuheng Wu2Hayden Carlton3https://orcid.org/0000-0002-2249-3067Alan Mantooth4https://orcid.org/0000-0001-6447-5345Britt Brooks5https://orcid.org/0000-0003-2525-9150University of Arkansas, Fayetteville, AR, USAUniversity of Arkansas, Fayetteville, AR, USAUniversity of Arkansas, Fayetteville, AR, USAUniversity of Arkansas, Fayetteville, AR, USAUniversity of Arkansas, Fayetteville, AR, USAWolfspeed, Durham, NC, USAThis paper presents an efficient physics-based electro-thermal model that solves some advanced problems of modeling Silicon Carbide (SiC) power MOSFETs. It is the first electro-thermal model that simulates the temperature dependency of the first and the third quadrant characteristics, including the reverse recovery of the body diode accurately and efficiently. It extends from a previous work that demonstrated the isothermal physics-based model of the gate-dependent body diode. Physics-based temperature scaling of the first and third quadrant allows simulation of the self-heating effect in a wide range of temperatures (27 °C–200 °C), even for the synchronous operation. Moreover, a physics-based modeling approach is taken to include gate-voltage dependent non-linearity of the gate to source capacitance (Cgs). Also, a physic-based segmented cascaded method is taken to accurately model the Miller (Crss), and the output (Coss) capacitances at the low and very high drain to source voltage regions. Further, the temperature-dependent breakdown mechanism is included for reliable system design. Double Pulse Tests (DPTs) at various temperatures up to 200 °C validate the model's accuracy. Lastly, a synchronous buck converter test demonstrates the model's ability to predict junction temperatures, validating the model's accuracy and efficiency in a continuous operation with self-heating.https://ieeexplore.ieee.org/document/9795145/Silicon CarbidePower <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc>Body diodeReverse recoverySynchronous rectificationFreewheeling diode |
| spellingShingle | Arman Ur Rashid Md Maksudul Hossain Yuheng Wu Hayden Carlton Alan Mantooth Britt Brooks An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior IEEE Open Journal of Power Electronics Silicon Carbide Power <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc> Body diode Reverse recovery Synchronous rectification Freewheeling diode |
| title | An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior |
| title_full | An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior |
| title_fullStr | An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior |
| title_full_unstemmed | An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior |
| title_short | An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior |
| title_sort | efficient electro thermal compact model of sic power mosfets including third quadrant behavior |
| topic | Silicon Carbide Power <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc> Body diode Reverse recovery Synchronous rectification Freewheeling diode |
| url | https://ieeexplore.ieee.org/document/9795145/ |
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