Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method
The Ce-substituted bismuth titanate (Bi4 Ti3 O12) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method and annealed at 700°C. The Bi-layered perovskite (with Ce substitution for Bi) single phase films were obtained and the thickness was 500 nm. At 12 V amplitude and 1...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2015-09-01
|
| Series: | Science and Engineering of Composite Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/secm-2013-0312 |