Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method
The Ce-substituted bismuth titanate (Bi4 Ti3 O12) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method and annealed at 700°C. The Bi-layered perovskite (with Ce substitution for Bi) single phase films were obtained and the thickness was 500 nm. At 12 V amplitude and 1...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2015-09-01
|
| Series: | Science and Engineering of Composite Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/secm-2013-0312 |
| _version_ | 1818609320943681536 |
|---|---|
| author | Li Sanxi Wei Nan Zhang Wenzheng |
| author_facet | Li Sanxi Wei Nan Zhang Wenzheng |
| author_sort | Li Sanxi |
| collection | DOAJ |
| description | The Ce-substituted bismuth titanate (Bi4 Ti3 O12) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method and annealed at 700°C. The Bi-layered perovskite (with Ce substitution for Bi) single phase films were obtained and the thickness was 500 nm. At 12 V amplitude and 1000 Hz frequency, ferroelectric tests results showed a hysteresis loop with remnant polarization (2Pr) and coercive field values (2Ec) of 9.86 μC/cm2 and 208 kV/cm, respectively. The structure and lattice parameters were analyzed by X-ray diffraction (XRD). The results showed that by increasing Ce substitution the ratio of a/c, the ferroelectric properties, increased when the Ce-substitution of 0.6, a and c values were 5.40734 Å and 5.3559 Å, respectively. The a-axis highly oriented structure may have influenced the remnant polarization and coercive field values of the films obtained. |
| first_indexed | 2024-12-16T14:56:40Z |
| format | Article |
| id | doaj.art-b266206bef9f45cd8adb99ac2f1b6c88 |
| institution | Directory Open Access Journal |
| issn | 0792-1233 2191-0359 |
| language | English |
| last_indexed | 2024-12-16T14:56:40Z |
| publishDate | 2015-09-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Science and Engineering of Composite Materials |
| spelling | doaj.art-b266206bef9f45cd8adb99ac2f1b6c882022-12-21T22:27:26ZengDe GruyterScience and Engineering of Composite Materials0792-12332191-03592015-09-0122549149610.1515/secm-2013-0312Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel methodLi SanxiWei Nan0Zhang Wenzheng1Materials Chemistry, Shenyang University of Chemical Technology, Shenyang Economic & Technology Development Zone, Shenyang, Liao Ning 110142, ChinaMaterials Chemistry, Shenyang University of Chemical Technology, Shenyang Economic & Technology Development Zone, Shenyang, Liao Ning 110142, ChinaThe Ce-substituted bismuth titanate (Bi4 Ti3 O12) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method and annealed at 700°C. The Bi-layered perovskite (with Ce substitution for Bi) single phase films were obtained and the thickness was 500 nm. At 12 V amplitude and 1000 Hz frequency, ferroelectric tests results showed a hysteresis loop with remnant polarization (2Pr) and coercive field values (2Ec) of 9.86 μC/cm2 and 208 kV/cm, respectively. The structure and lattice parameters were analyzed by X-ray diffraction (XRD). The results showed that by increasing Ce substitution the ratio of a/c, the ferroelectric properties, increased when the Ce-substitution of 0.6, a and c values were 5.40734 Å and 5.3559 Å, respectively. The a-axis highly oriented structure may have influenced the remnant polarization and coercive field values of the films obtained.https://doi.org/10.1515/secm-2013-0312bismuth titanateferroelectriclattice parametersol-gel |
| spellingShingle | Li Sanxi Wei Nan Zhang Wenzheng Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method Science and Engineering of Composite Materials bismuth titanate ferroelectric lattice parameter sol-gel |
| title | Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method |
| title_full | Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method |
| title_fullStr | Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method |
| title_full_unstemmed | Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method |
| title_short | Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method |
| title_sort | morphology and ferroelectric properties of ce substituted bi4 ti3 o12 thin films prepared by sol gel method |
| topic | bismuth titanate ferroelectric lattice parameter sol-gel |
| url | https://doi.org/10.1515/secm-2013-0312 |
| work_keys_str_mv | AT lisanxi morphologyandferroelectricpropertiesofcesubstitutedbi4ti3o12thinfilmspreparedbysolgelmethod AT weinan morphologyandferroelectricpropertiesofcesubstitutedbi4ti3o12thinfilmspreparedbysolgelmethod AT zhangwenzheng morphologyandferroelectricpropertiesofcesubstitutedbi4ti3o12thinfilmspreparedbysolgelmethod |