Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

Abstract We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the...

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Bibliographic Details
Main Authors: Galia Pozina, Azat R. Gubaydullin, Maxim I. Mitrofanov, Mikhail A. Kaliteevski, Iaroslav V. Levitskii, Gleb V. Voznyuk, Evgeniy E. Tatarinov, Vadim P. Evtikhiev, Sergey N. Rodin, Vasily N. Kaliteevskiy, Leonid S. Chechurin
Format: Article
Language:English
Published: Nature Portfolio 2018-05-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-018-25647-7

Internet

https://doi.org/10.1038/s41598-018-25647-7

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