Investigation of the Tetrakis(dimethylamino)hafnium and H<sub>2</sub>S ALD Process: Effects of Deposition Temperature and Annealing
HfS<sub>2</sub> has recently emerged as a promising 2D semiconductor, but the lack of a reliable method to produce continuous films on a large scale has hindered its spreading. The atomic layer deposition of the material with the precursor tetrakis-dimethylamino-hafnium with H<sub>...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-05-01
|
| Series: | Solids |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-6497/3/2/18 |