An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content AlxGa1−xN
High Al mole fraction AlGaN is an ultrawide bandgap semiconductor with potential applications in power electronics and deep UV detectors. Although n-type material is achievable with Si-doping, the role of Si is controversial, particularly for AlxGa1−xN with x > 0.8. For this paper, AlGaN films we...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0180912 |