Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide

Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide

Abstract Oxide semiconductor thin‐film transistors (TFTs) with low‐voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low‐voltage indium‐tin‐zinc‐oxide (ITZO) TFTs with excellent device performance...

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Bibliographic Details
Main Authors: Jidong Jin, Xiaoyu Lin, Jiawei Zhang, Jeongho Lee, Zhenyuan Xiao, Soobin Lee, Jaekyun Kim
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Electronic Materials
Subjects:
indium‐tin‐zinc‐oxide
thin film transistors
anodization
anodic oxide
dual channel
low voltage operation
Online Access:https://doi.org/10.1002/aelm.202201117

Internet

https://doi.org/10.1002/aelm.202201117

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