Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide
Abstract Oxide semiconductor thin‐film transistors (TFTs) with low‐voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low‐voltage indium‐tin‐zinc‐oxide (ITZO) TFTs with excellent device performance...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-03-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202201117 |
| _version_ | 1797772476814458880 |
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| author | Jidong Jin Xiaoyu Lin Jiawei Zhang Jeongho Lee Zhenyuan Xiao Soobin Lee Jaekyun Kim |
| author_facet | Jidong Jin Xiaoyu Lin Jiawei Zhang Jeongho Lee Zhenyuan Xiao Soobin Lee Jaekyun Kim |
| author_sort | Jidong Jin |
| collection | DOAJ |
| description | Abstract Oxide semiconductor thin‐film transistors (TFTs) with low‐voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low‐voltage indium‐tin‐zinc‐oxide (ITZO) TFTs with excellent device performance and bias stability based on a dual‐channel layer and an anodic‐oxide dielectric layer are reported. An ultra‐thin anodic AlxOy film as a gate dielectric layer is prepared using an anodization process. The dual‐channel layer consists of an oxygen‐uncompensated channel layer and an oxygen‐compensated capping layer. It is confirmed that the dual‐channel structure is effective for enhancing device performance and bias stability in comparison with the single‐channel structure. As a result, the dual‐channel ITZO TFT gated with anodic AlxOy exhibits an effective saturation mobility of 12.56 cm2 Vs−1, a threshold voltage of 0.28 V, a subthreshold swing of 76 mV dec−1, a low‐voltage operation of 1 V, and good operational stability (threshold voltage shift (ΔVTH) < −0.03 V under a negative gate bias stress and ΔVTH < 0.15 under positive gate bias stress of 3600 s). The work shows that the ITZO TFTs, based on a dual‐channel layer and an anodic‐oxide gate dielectric layer, have great potential for low‐power, portable, and wearable electronics. |
| first_indexed | 2024-03-12T21:52:29Z |
| format | Article |
| id | doaj.art-b2c31c0babb24fb19e0a40a2440632fa |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:52:29Z |
| publishDate | 2023-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-b2c31c0babb24fb19e0a40a2440632fa2023-07-26T01:36:08ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-03-0193n/an/a10.1002/aelm.202201117Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐OxideJidong Jin0Xiaoyu Lin1Jiawei Zhang2Jeongho Lee3Zhenyuan Xiao4Soobin Lee5Jaekyun Kim6Department of Photonics and Nanoelectronics Hanyang University Ansan 15588 Republic of KoreaShandong Technology Center of Nanodevices and Integration School of Microelectronics Shandong University Jinan 250100 ChinaShandong Technology Center of Nanodevices and Integration School of Microelectronics Shandong University Jinan 250100 ChinaDepartment of Photonics and Nanoelectronics Hanyang University Ansan 15588 Republic of KoreaDepartment of Photonics and Nanoelectronics Hanyang University Ansan 15588 Republic of KoreaDepartment of Photonics and Nanoelectronics Hanyang University Ansan 15588 Republic of KoreaDepartment of Photonics and Nanoelectronics Hanyang University Ansan 15588 Republic of KoreaAbstract Oxide semiconductor thin‐film transistors (TFTs) with low‐voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low‐voltage indium‐tin‐zinc‐oxide (ITZO) TFTs with excellent device performance and bias stability based on a dual‐channel layer and an anodic‐oxide dielectric layer are reported. An ultra‐thin anodic AlxOy film as a gate dielectric layer is prepared using an anodization process. The dual‐channel layer consists of an oxygen‐uncompensated channel layer and an oxygen‐compensated capping layer. It is confirmed that the dual‐channel structure is effective for enhancing device performance and bias stability in comparison with the single‐channel structure. As a result, the dual‐channel ITZO TFT gated with anodic AlxOy exhibits an effective saturation mobility of 12.56 cm2 Vs−1, a threshold voltage of 0.28 V, a subthreshold swing of 76 mV dec−1, a low‐voltage operation of 1 V, and good operational stability (threshold voltage shift (ΔVTH) < −0.03 V under a negative gate bias stress and ΔVTH < 0.15 under positive gate bias stress of 3600 s). The work shows that the ITZO TFTs, based on a dual‐channel layer and an anodic‐oxide gate dielectric layer, have great potential for low‐power, portable, and wearable electronics.https://doi.org/10.1002/aelm.202201117indium‐tin‐zinc‐oxidethin film transistorsanodizationanodic oxidedual channellow voltage operation |
| spellingShingle | Jidong Jin Xiaoyu Lin Jiawei Zhang Jeongho Lee Zhenyuan Xiao Soobin Lee Jaekyun Kim Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide Advanced Electronic Materials indium‐tin‐zinc‐oxide thin film transistors anodization anodic oxide dual channel low voltage operation |
| title | Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide |
| title_full | Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide |
| title_fullStr | Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide |
| title_full_unstemmed | Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide |
| title_short | Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide |
| title_sort | low voltage high performance indium tin zinc oxide thin film transistors based on dual channel and anodic oxide |
| topic | indium‐tin‐zinc‐oxide thin film transistors anodization anodic oxide dual channel low voltage operation |
| url | https://doi.org/10.1002/aelm.202201117 |
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