High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains

High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains

In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and a novel ohmic/Schottky-hybrid drain contact is achieved, which is the record breakdown voltage ever achieved on AlGaN-channel HEMTs. The fabricated device exhibits a high...

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Bibliographic Details
Main Authors: Weihang Zhang, Jincheng Zhang, Ming Xiao, Li Zhang, Yue Hao
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN channel
ohmic/Schottky-hybrid drain
breakdown voltage
MOVPE
Online Access:https://ieeexplore.ieee.org/document/8430382/

Internet

https://ieeexplore.ieee.org/document/8430382/

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