Process research on ultrasonic vibration assisted lapping of single crystal silicon carbide

Process research on ultrasonic vibration assisted lapping of single crystal silicon carbide

Aimming at the problems such as low material removal rate and abrasive agglomeration when polishing single crystal silicon carbide wafers with traditional methods, this study proposed a ultrasonic vibration assisted lapping method. It studied the influence of different process parameters including s...

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Bibliographic Details
Main Authors: Xiaoli HAO, Zewei YUAN, Quan WEN, Shengli GUO
Format: Article
Language:zho
Published: Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. 2022-06-01
Series:Jin'gangshi yu moliao moju gongcheng
Subjects:
ultrasonic vibration
silicon carbide
polishing
material removal rate
Online Access:http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2021.0208

Internet

http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2021.0208

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