Process research on ultrasonic vibration assisted lapping of single crystal silicon carbide
Aimming at the problems such as low material removal rate and abrasive agglomeration when polishing single crystal silicon carbide wafers with traditional methods, this study proposed a ultrasonic vibration assisted lapping method. It studied the influence of different process parameters including s...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd.
2022-06-01
|
| Series: | Jin'gangshi yu moliao moju gongcheng |
| Subjects: | |
| Online Access: | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2021.0208 |
| _version_ | 1797805914582941696 |
|---|---|
| author | Xiaoli HAO Zewei YUAN Quan WEN Shengli GUO |
| author_facet | Xiaoli HAO Zewei YUAN Quan WEN Shengli GUO |
| author_sort | Xiaoli HAO |
| collection | DOAJ |
| description | Aimming at the problems such as low material removal rate and abrasive agglomeration when polishing single crystal silicon carbide wafers with traditional methods, this study proposed a ultrasonic vibration assisted lapping method. It studied the influence of different process parameters including speeds, abrasive concentrations, pressures and abrasive grain sizes on the lapping efficiency and lapping quality of single crystal silicon carbide wafers. The experimental results and theoretical analysis show that ultrasonic vibration effectively improves the material removal rate of single crystal silicon carbide wafer polishing. When the lapping disc speed is 50 r/min, the lapping fluid concentration is 2.5%, the pressure is 0.015 MPa and the abrasive grain size is 0.5 μm, the effect of improving the material removal rate is the most obvious, thus increased by 23.4%, 33.8%, 72.3% and 184.2% respectively. At the same time, by tracking and testing the surface roughness during the lapping process, the best time for ultrasonic vibration-assisted grinding of abrasives with different particle sizes was determined. |
| first_indexed | 2024-03-13T05:59:20Z |
| format | Article |
| id | doaj.art-b2f12179024f4c64b45f84df8befcee7 |
| institution | Directory Open Access Journal |
| issn | 1006-852X |
| language | zho |
| last_indexed | 2024-03-13T05:59:20Z |
| publishDate | 2022-06-01 |
| publisher | Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. |
| record_format | Article |
| series | Jin'gangshi yu moliao moju gongcheng |
| spelling | doaj.art-b2f12179024f4c64b45f84df8befcee72023-06-13T01:54:00ZzhoZhengzhou Research Institute for Abrasives & Grinding Co., Ltd.Jin'gangshi yu moliao moju gongcheng1006-852X2022-06-0142326827410.13394/j.cnki.jgszz.2021.0208zxh3hxlProcess research on ultrasonic vibration assisted lapping of single crystal silicon carbideXiaoli HAO0Zewei YUAN1Quan WEN2Shengli GUO3School of Mechanical Engineering, Shenyang University of Technology, Shenyang 110870, ChinaSchool of Mechanical Engineering, Shenyang University of Technology, Shenyang 110870, ChinaSchool of Mechanical Engineering and Automation, Northeastern University, Shenyang 110870, ChinaSchool of Mechanical Engineering, Shenyang University of Technology, Shenyang 110870, ChinaAimming at the problems such as low material removal rate and abrasive agglomeration when polishing single crystal silicon carbide wafers with traditional methods, this study proposed a ultrasonic vibration assisted lapping method. It studied the influence of different process parameters including speeds, abrasive concentrations, pressures and abrasive grain sizes on the lapping efficiency and lapping quality of single crystal silicon carbide wafers. The experimental results and theoretical analysis show that ultrasonic vibration effectively improves the material removal rate of single crystal silicon carbide wafer polishing. When the lapping disc speed is 50 r/min, the lapping fluid concentration is 2.5%, the pressure is 0.015 MPa and the abrasive grain size is 0.5 μm, the effect of improving the material removal rate is the most obvious, thus increased by 23.4%, 33.8%, 72.3% and 184.2% respectively. At the same time, by tracking and testing the surface roughness during the lapping process, the best time for ultrasonic vibration-assisted grinding of abrasives with different particle sizes was determined.http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2021.0208ultrasonic vibrationsilicon carbidepolishingmaterial removal rate |
| spellingShingle | Xiaoli HAO Zewei YUAN Quan WEN Shengli GUO Process research on ultrasonic vibration assisted lapping of single crystal silicon carbide Jin'gangshi yu moliao moju gongcheng ultrasonic vibration silicon carbide polishing material removal rate |
| title | Process research on ultrasonic vibration assisted lapping of single crystal silicon carbide |
| title_full | Process research on ultrasonic vibration assisted lapping of single crystal silicon carbide |
| title_fullStr | Process research on ultrasonic vibration assisted lapping of single crystal silicon carbide |
| title_full_unstemmed | Process research on ultrasonic vibration assisted lapping of single crystal silicon carbide |
| title_short | Process research on ultrasonic vibration assisted lapping of single crystal silicon carbide |
| title_sort | process research on ultrasonic vibration assisted lapping of single crystal silicon carbide |
| topic | ultrasonic vibration silicon carbide polishing material removal rate |
| url | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2021.0208 |
| work_keys_str_mv | AT xiaolihao processresearchonultrasonicvibrationassistedlappingofsinglecrystalsiliconcarbide AT zeweiyuan processresearchonultrasonicvibrationassistedlappingofsinglecrystalsiliconcarbide AT quanwen processresearchonultrasonicvibrationassistedlappingofsinglecrystalsiliconcarbide AT shengliguo processresearchonultrasonicvibrationassistedlappingofsinglecrystalsiliconcarbide |