Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy

Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy

The defect states and electrical properties of AlxGa1-xN (x = 0.4) grown by hydride vapor phase epitaxy (HVPE) were investigated. To identify the effect of incorporation of elemental O in AlxGa1-xN crystals, HVPE growth of AlxGa1-xN crystals was conducted with and without the flow of O2. The crystal...

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Bibliographic Details
Main Authors: Chang Wan Ahn, Sungsoo Park, Eun Kyu Kim
Format: Article
Language:English
Published: Elsevier 2022-03-01
Series:Journal of Materials Research and Technology
Subjects:
AlGaN
Defect states
HVPE
DLTS
Schottky diode
Oxygen effect
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785422001016

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http://www.sciencedirect.com/science/article/pii/S2238785422001016

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