Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy
The defect states and electrical properties of AlxGa1-xN (x = 0.4) grown by hydride vapor phase epitaxy (HVPE) were investigated. To identify the effect of incorporation of elemental O in AlxGa1-xN crystals, HVPE growth of AlxGa1-xN crystals was conducted with and without the flow of O2. The crystal...
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| Format: | Article |
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Elsevier
2022-03-01
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| Series: | Journal of Materials Research and Technology |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785422001016 |
| _version_ | 1818317801271590912 |
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| author | Chang Wan Ahn Sungsoo Park Eun Kyu Kim |
| author_facet | Chang Wan Ahn Sungsoo Park Eun Kyu Kim |
| author_sort | Chang Wan Ahn |
| collection | DOAJ |
| description | The defect states and electrical properties of AlxGa1-xN (x = 0.4) grown by hydride vapor phase epitaxy (HVPE) were investigated. To identify the effect of incorporation of elemental O in AlxGa1-xN crystals, HVPE growth of AlxGa1-xN crystals was conducted with and without the flow of O2. The crystal quality and electrical properties of the AlxGa1-xN layer was analyzed by X-ray diffraction and deep level transient spectroscopy (DLTS). Schottky devices for I–V, C–V and DLTS measurement were formed using Ni/Au metal and Ti/Al metallization. Capacitance DLTS spectra showed two types of deep traps of H1 and H2 in Al0.4Ga0.6N grown without oxygen, while H1’ traps were observed in Al0.4Ga0.6N grown with oxygen. All traps were hole-like traps with activation energies of 1.3 eV(H1), 0.59 eV(H2), and 1.2 eV(H1ʹ). These results show that the oxygen atoms can improve the crystal quality and suppress the defect states in AlxGa1-xN crystals. |
| first_indexed | 2024-12-13T09:43:06Z |
| format | Article |
| id | doaj.art-b2f55a6763b6463384869b2e51fdf3d7 |
| institution | Directory Open Access Journal |
| issn | 2238-7854 |
| language | English |
| last_indexed | 2024-12-13T09:43:06Z |
| publishDate | 2022-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materials Research and Technology |
| spelling | doaj.art-b2f55a6763b6463384869b2e51fdf3d72022-12-21T23:52:08ZengElsevierJournal of Materials Research and Technology2238-78542022-03-011714851490Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxyChang Wan Ahn0Sungsoo Park1Eun Kyu Kim2Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul, 04763, Republic of KoreaDepartment of Science Education, Jeonju University, 303 Cheonjam-ro, Wansan-gu, Jeollabuk-do, Republic of Korea; Corresponding author.Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul, 04763, Republic of Korea; Corresponding author.The defect states and electrical properties of AlxGa1-xN (x = 0.4) grown by hydride vapor phase epitaxy (HVPE) were investigated. To identify the effect of incorporation of elemental O in AlxGa1-xN crystals, HVPE growth of AlxGa1-xN crystals was conducted with and without the flow of O2. The crystal quality and electrical properties of the AlxGa1-xN layer was analyzed by X-ray diffraction and deep level transient spectroscopy (DLTS). Schottky devices for I–V, C–V and DLTS measurement were formed using Ni/Au metal and Ti/Al metallization. Capacitance DLTS spectra showed two types of deep traps of H1 and H2 in Al0.4Ga0.6N grown without oxygen, while H1’ traps were observed in Al0.4Ga0.6N grown with oxygen. All traps were hole-like traps with activation energies of 1.3 eV(H1), 0.59 eV(H2), and 1.2 eV(H1ʹ). These results show that the oxygen atoms can improve the crystal quality and suppress the defect states in AlxGa1-xN crystals.http://www.sciencedirect.com/science/article/pii/S2238785422001016AlGaNDefect statesHVPEDLTSSchottky diodeOxygen effect |
| spellingShingle | Chang Wan Ahn Sungsoo Park Eun Kyu Kim Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy Journal of Materials Research and Technology AlGaN Defect states HVPE DLTS Schottky diode Oxygen effect |
| title | Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy |
| title_full | Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy |
| title_fullStr | Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy |
| title_full_unstemmed | Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy |
| title_short | Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy |
| title_sort | effect of oxygen on defect states of al0 4ga0 6n layers grown by hydride vapor phase epitaxy |
| topic | AlGaN Defect states HVPE DLTS Schottky diode Oxygen effect |
| url | http://www.sciencedirect.com/science/article/pii/S2238785422001016 |
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