Possibilities of increase of radiation firmness of semiconductor materials

Possibilities of increase of radiation firmness of semiconductor materials

In given article various methods of the increase of the radiation hardness of semiconductors materials such as silicon and InSb are discussed. Parameters of silicon irradiated by different types and fluences of high energy irradiation and annealed were studied by optical and electrical methods. It w...

Full description

Bibliographic Details
Main Authors: P. G. Litovchenko, L. I. Barabash, S. V. Berdnichenko, D. Bizello, M. D. Varentsov, V. I. Varnina, A. A.Groza, O. P. Dolgolenko, A. Ya. Karpenko, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, V. N. Pidtynnykh, L. A. Polivtsev, S. B. Smirnov, M. I. Starchik
Format: Article
Language:English
Published: Institute for Nuclear Research, National Academy of Sciences of Ukraine 2008-08-01
Series:Âderna Fìzika ta Energetika
Online Access:http://jnpae.kinr.kiev.ua/24(2)/Articles_PDF/jnpae-2008-2(24)-0060-Litovchenko.pdf

Internet

http://jnpae.kinr.kiev.ua/24(2)/Articles_PDF/jnpae-2008-2(24)-0060-Litovchenko.pdf

Similar Items