A Hierarchical Driving Control Strategy Applied to Parallel SiC MOSFETs
SiC (silicon carbide) MOSFETs have been extensively used in the power electronics industry due to their exceptional characteristics. First, it was found in this study that their driving loss is larger than their conduction loss in high-frequency applications. Based on this finding, this study propos...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-12-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/13/1/70 |