New Formulation to Synthetize Semiconductor Bi<sub>2</sub>S<sub>3</sub> Thin Films Using Chemical Bath Deposition for Optoelectronic Applications

New Formulation to Synthetize Semiconductor Bi<sub>2</sub>S<sub>3</sub> Thin Films Using Chemical Bath Deposition for Optoelectronic Applications

Anisotropic materials possess direction dependent properties as a result of symmetry within their structure. Bismuth sulfide (Bi<sub>2</sub>S<sub>3</sub>) is an important semiconductor exhibiting anisotropy due to its crystalline and stratified structure. In this manuscript w...

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Bibliographic Details
Main Authors: Amanda Carrillo-Castillo, Brayan G. Rivas-Valles, Santos Jesus Castillo, Marcela Mireles Ramirez, Priscy Alfredo Luque-Morales
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Symmetry
Subjects:
Bi<sub>2</sub>S<sub>3</sub>
chemical bath deposition
thin films
semiconductor
Online Access:https://www.mdpi.com/2073-8994/14/12/2487

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https://www.mdpi.com/2073-8994/14/12/2487

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