Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors

Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors

Abstract Sol–gel indium–gallium–zinc oxide (IGZO) semiconductors are developed as active components of thin‐film transistors (TFTs) because of their high electron mobility, cost‐effective large‐area fabrication, and applicability for flexible substrates. Controlling oxygen vacancies (Vo) in the IGZO...

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Bibliographic Details
Main Authors: Wonsik Kim, Won‐June Lee, Taehyun Kwak, Seokhyeon Baek, Seung‐Hoon Lee, Sungjun Park
Format: Article
Language:English
Published: Wiley-VCH 2022-04-01
Series:Advanced Materials Interfaces
Subjects:
indium–gallium–zinc oxide
inverters
oxygen vacancy
solution‐processed thin‐film transistors
ultraviolet ozone treatment
V th modulation
Online Access:https://doi.org/10.1002/admi.202200032

Internet

https://doi.org/10.1002/admi.202200032

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