Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors

Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors

Abstract Sol–gel indium–gallium–zinc oxide (IGZO) semiconductors are developed as active components of thin‐film transistors (TFTs) because of their high electron mobility, cost‐effective large‐area fabrication, and applicability for flexible substrates. Controlling oxygen vacancies (Vo) in the IGZO...

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Xehetasun bibliografikoak
Egile Nagusiak: Wonsik Kim, Won‐June Lee, Taehyun Kwak, Seokhyeon Baek, Seung‐Hoon Lee, Sungjun Park
Formatua: Artikulua
Hizkuntza:English
Argitaratua: Wiley-VCH 2022-04-01
Saila:Advanced Materials Interfaces
Gaiak:
indium–gallium–zinc oxide
inverters
oxygen vacancy
solution‐processed thin‐film transistors
ultraviolet ozone treatment
V th modulation
Sarrera elektronikoa:https://doi.org/10.1002/admi.202200032

Internet

https://doi.org/10.1002/admi.202200032

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