Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET
The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect transistor (DG-TFET) taken as a device under test (DUT)...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2022-01-01
|
Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9915564/ |