Slew rate control of switching transient for SiC MOSFET in boost converter using digital active gate driver
Abstract This paper experimentally validates a fully digitalized active gate driver for suppressing the switching surge voltage of SiC MOSFETs in a boost converter. High‐voltage power conversion systems are expected to adopt SiC unipolar power devices utilizing their high‐speed switching capability....
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-02-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12398 |