Study of the Bonding Characteristics at β-Ga<sub>2</sub>O<sub>3</sub>(<span style="text-decoration: overline">2</span>01)/4H-SiC(0001) Interfaces from First Principles and Experiment

Study of the Bonding Characteristics at β-Ga<sub>2</sub>O<sub>3</sub>(<span style="text-decoration: overline">2</span>01)/4H-SiC(0001) Interfaces from First Principles and Experiment

For the first time, β-Ga<sub>2</sub>O<sub>3</sub> were prepared on 4H-SiC (0001) substrates using a low-pressure chemical vapor deposition (LPCVD) technique. The obtained β-Ga<sub>2</sub>O<sub>3</sub>/4H-SiC heterostructures display strongly preferenti...

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Bibliographic Details
Main Authors: Bei Xu, Jichao Hu, Jiaqi Meng, Xiaomin He, Xi Wang, Hongbin Pu
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Crystals
Subjects:
β-Ga<sub>2</sub>O<sub>3</sub>/4H-SiC heterointerface
electronic properties
bonding characteristics
first-principle
Online Access:https://www.mdpi.com/2073-4352/13/2/160

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