Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates

Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates

Red‐emitting (≈643 nm) InGaN multiquantum well active device layers and micro‐LEDs are grown by metal organic chemical vapor deposition (MOCVD) on relaxed InGaN templates, the latter created via thermal decomposition of an InGaN underlayer, and examined via power‐ and temperature‐dependent photolumi...

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Bibliographic Details
Main Authors: Norleakvisoth Lim, Philip Chan, Hsun–Ming Chang, Vincent Rienzi, Michael J. Gordon, Shuji Nakamura
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Photonics Research
Subjects:
InGaN
micro-LEDs
metal organic chemical vapor deposition (MOCVD)
strain-relaxed templates
Online Access:https://doi.org/10.1002/adpr.202200286

Internet

https://doi.org/10.1002/adpr.202200286

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