Annealing effect on grain boundary width of polycrystalline silicon for photovoltaic application

Annealing effect on grain boundary width of polycrystalline silicon for photovoltaic application

Nowadays, LPCVD (Low Pressure Chemical Vapor Deposition) and highly doped polycrystalline silicon films have numerous applications in microelectronic component manufacturing technologies, integrated circuits and solar cells. The complexity of the circuits, and the increasing degree of integration of...

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Bibliographic Details
Main Authors: B. Zaidi, B. Hadjoudja, S. Belghit, B. Chouial, M. Mekhalfa
Format: Article
Language:English
Published: Renewable Energy Development Center (CDER) 2018-09-01
Series:Revue des Énergies Renouvelables
Subjects:
polycrystalline silicon
electrical conductivity
trap states
grain boundaries
Online Access:https://revue.cder.dz/index.php/rer/article/view/699

Internet

https://revue.cder.dz/index.php/rer/article/view/699

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