Nuclear spin quantum memory in silicon carbide

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g., vanadium, emit in one of the telecom bands, but the large ground-state hyperfine manifold poses a problem for applications which require pure quantum states....

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Bibliographic Details
Main Authors: Benedikt Tissot, Michael Trupke, Philipp Koller, Thomas Astner, Guido Burkard
Format: Article
Language:English
Published: American Physical Society 2022-08-01
Series:Physical Review Research
Online Access:http://doi.org/10.1103/PhysRevResearch.4.033107