Nuclear spin quantum memory in silicon carbide
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g., vanadium, emit in one of the telecom bands, but the large ground-state hyperfine manifold poses a problem for applications which require pure quantum states....
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2022-08-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.4.033107 |
| _version_ | 1827285480550432768 |
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| author | Benedikt Tissot Michael Trupke Philipp Koller Thomas Astner Guido Burkard |
| author_facet | Benedikt Tissot Michael Trupke Philipp Koller Thomas Astner Guido Burkard |
| author_sort | Benedikt Tissot |
| collection | DOAJ |
| description | Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g., vanadium, emit in one of the telecom bands, but the large ground-state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC. |
| first_indexed | 2024-04-24T10:14:16Z |
| format | Article |
| id | doaj.art-b3d3a697c04d42dfa8c44787e82fb552 |
| institution | Directory Open Access Journal |
| issn | 2643-1564 |
| language | English |
| last_indexed | 2024-04-24T10:14:16Z |
| publishDate | 2022-08-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review Research |
| spelling | doaj.art-b3d3a697c04d42dfa8c44787e82fb5522024-04-12T17:23:28ZengAmerican Physical SocietyPhysical Review Research2643-15642022-08-014303310710.1103/PhysRevResearch.4.033107Nuclear spin quantum memory in silicon carbideBenedikt TissotMichael TrupkePhilipp KollerThomas AstnerGuido BurkardTransition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g., vanadium, emit in one of the telecom bands, but the large ground-state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC.http://doi.org/10.1103/PhysRevResearch.4.033107 |
| spellingShingle | Benedikt Tissot Michael Trupke Philipp Koller Thomas Astner Guido Burkard Nuclear spin quantum memory in silicon carbide Physical Review Research |
| title | Nuclear spin quantum memory in silicon carbide |
| title_full | Nuclear spin quantum memory in silicon carbide |
| title_fullStr | Nuclear spin quantum memory in silicon carbide |
| title_full_unstemmed | Nuclear spin quantum memory in silicon carbide |
| title_short | Nuclear spin quantum memory in silicon carbide |
| title_sort | nuclear spin quantum memory in silicon carbide |
| url | http://doi.org/10.1103/PhysRevResearch.4.033107 |
| work_keys_str_mv | AT benedikttissot nuclearspinquantummemoryinsiliconcarbide AT michaeltrupke nuclearspinquantummemoryinsiliconcarbide AT philippkoller nuclearspinquantummemoryinsiliconcarbide AT thomasastner nuclearspinquantummemoryinsiliconcarbide AT guidoburkard nuclearspinquantummemoryinsiliconcarbide |