The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the stru...

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Detaylı Bibliyografya
Asıl Yazarlar: Hongqiang Li, Jianing Wang, Jinjun Bai, Shanshan Zhang, Sai Zhang, Yaqiang Sun, Qianzhi Dou, Mingjun Ding, Youxi Wang, Dan Qu, Jilin Du, Chunxiao Tang, Enbang Li, Joan Daniel Prades
Materyal Türü: Makale
Dil:English
Baskı/Yayın Bilgisi: MDPI AG 2020-05-01
Seri Bilgileri:Nanomaterials
Konular:
Ge/Si quantum well
tensile strain
n-type doping
lattice thermal mismatch process
Si-based light source
Online Erişim:https://www.mdpi.com/2079-4991/10/5/1006

Internet

https://www.mdpi.com/2079-4991/10/5/1006

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