High spin current density in gate-tunable spin-valves based on graphene nanoribbons

Abstract The usage of two-dimensional (2D) materials will be very advantageous for many developing spintronic device designs, providing a superior method of managing spin. Non-volatile memory technologies, particularly magnetic random-access memories (MRAMs), characterized by 2D materials are the go...

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Bibliographic Details
Main Authors: Chun-Pu Wang, Shih-Hung Cheng, Wen-Jeng Hsueh
Format: Article
Language:English
Published: Nature Portfolio 2023-06-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-023-36478-6