Geometric and anisotropy effects on voltage driven magnetic switching behaviors in nanoscale multiferroic heterostructure
Voltage driven magnetic switching (VDMS) in multiferroic heterostructure is highly demanded for next generation energy efficient high-density memory (e.g. magnetoelectric random access memory) and spintronic devices. For practical applications in large scale integrated device, it is imperative to un...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-04-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5089780 |