High conductivity of n-type β-Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition
Currently, β-Ga2O3 has attracted significant attention as a wide bandgap semiconductor, and numerous growth techniques are being explored to control its carrier concentration for various applications. In this study, we investigated the homoepitaxial growth of Si-doped β-Ga2O3 thin films on a Fe-dope...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0182448 |