Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100...

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Bibliographic Details
Main Authors: Anya Curran, Agnieszka Gocalinska, Andrea Pescaglini, Eleonora Secco, Enrica Mura, Kevin Thomas, Roger E. Nagle, Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley, Farzan Gity
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Crystals
Subjects:
polycrystalline
InAs
thin films
Online Access:https://www.mdpi.com/2073-4352/11/2/160

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https://www.mdpi.com/2073-4352/11/2/160

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