Stable Field Emission from Vertically Oriented SiC Nanoarrays

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a...

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Bibliographic Details
Main Authors: Jianfeng Xiao, Jiuzhou Zhao, Guanjiang Liu, Mattew Thomas Cole, Shenghan Zhou, Ke Chen, Xinchuan Liu, Zhenjun Li, Chi Li, Qing Dai
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Nanomaterials
Subjects:
silicon carbide
one-dimensional nanomaterials
nanoarrays
field emission
Online Access:https://www.mdpi.com/2079-4991/11/11/3025

Internet

https://www.mdpi.com/2079-4991/11/11/3025

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