A Compact Model for Interface-Type Self-Rectifying Resistive Memory With Experiment Verification

A Compact Model for Interface-Type Self-Rectifying Resistive Memory With Experiment Verification

Resistive random access memory (RRAM), a new non-volatile memory, enables hardware accelerators based on in-memory computing with improved throughput and energy efficiency, enabling machine learning on-the-fly inference at the edge. However, sneak-path currents in RRAM crossbar arrays (CBAs) can cau...

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Bibliographic Details
Main Authors: Jin-Woo Kim, Jun-Seok Beom, Hong-Sub Lee, Nam-Seog Kim
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
Compact model
crossbar array
interface-type RRAM
multiply and accumulate (MAC)
nano-battery effect
parasitic capacitance
Online Access:https://ieeexplore.ieee.org/document/10379796/

Internet

https://ieeexplore.ieee.org/document/10379796/

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