Increasing the radiation resistance of single-crystal silicon epitaxial layers
The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of t...
| Asıl Yazarlar: | , , , |
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| Materyal Türü: | Makale |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
Politehperiodika
2014-12-01
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| Seri Bilgileri: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Konular: | |
| Online Erişim: | http://www.tkea.com.ua/tkea/2014/5-6_2014/pdf/09.pdf |